ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,695, issued on June 23, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Methods of improving PMOS transistor performance" was invented by Yongjing Lin (San Jose, Calif.), Zhihui Liu (Sunnyvale, Calif.), Sourav Garg (Santa Clara, Calif.), Lu Li (Santa Clara, Calif.), Haoming Yan (Santa Clara, Calif.), Haoyan Sha (San Jose, Calif.), Bhaskar Jyoti Bhuyan (San Jose, Calif.), Shih Chung Chen (Cupertino, Calif.), Janardhan Devrajan (Santa Clara, Calif.) and Srinivas Gandikota (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of manufacturing electronic devices, such as transistors (negative metal-oxide-semiconducto...