ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,537, issued on June 16, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Etching methods for reducing micro and macro scalloping on sidewalls of etched features of semiconductor devices" was invented by Mang-Mang Ling (San Jose, Calif.), Jong Mun Kim (San Jose, Calif.), Srinivas D. Nemani (Sunnyvale, Calif.) and Ellie Y. Yieh (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relate to methods for patterning a material layer on a substrate. The method includes forming a hard mask layer on a material layer disposed on a substrate. The material layer includes a plurality of first layers...