ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,609, issued on July 7, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Germanium and silicon stacks for 3D NAND" was invented by Sieun Chae (San Jose, Calif.), Susmit Singha Roy (Campbell, Calif.) and Abhijit Basu Mallick (Fremont, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region...