ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,043, issued on July 14, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Reactive-ion deposition processes for dielectric material formation" was invented by Bhaskar Jyoti Bhuyan (Santa Clara, Calif.), Mark J. Saly (Morgan Hill, Calif.), Lakmal Charidu Kalutarage (San Jose, Calif.), Feng Q. Liu (San Jose, Calif.), Jeffrey W. Anthis (Redwood City, Calif.), Abhijit Basu Mallick (Fremont, Calif.) and Akhil Singhal (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes obtaining a base structure of an electronic device, the base structure including at least one opening, and forming, using a reactive-ion deposition...