US Patent Issued to Applied Materials on July 14 for "Growth suppression deposition for CVD tungsten gap fill with thermal treatment" (California Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,115, issued on July 14, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Growth suppression deposition for CVD tungsten gap fill with thermal treatment" was invented by Yang Li (Sunnyvale, Calif.), Peiqi Wang (Campbell, Calif.), Kai Wu (Palo Alto, Calif.), Dongming Iu (Union City, Calif.), Xiaozhou Yu (Santa Clara, Calif.), Insu Ha (San Jose, Calif.) and Meng Zhu (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure provided herein include systems and methods for forming low resistivity tungsten features in a semiconductor device manufacturing scheme using growth suppression techniques. The s...