US Patent Issued to Applied Materials on July 14 for "Doped silicon oxide for bottom-up deposition" (California Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,046, issued on July 14, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Doped silicon oxide for bottom-up deposition" was invented by Woongsik Nam (Santa Clara, Calif.), Euhngi Lee (San Jose, Calif.), Tianyang Li (San Jose, Calif.), Jisung Park (Sunnyvale, Calif.), Hang Yu (San Jose, Calif.), Deenesh Padhi (Saratoga, Calif.), Shichen Fu (Santa Clara, Calif.) and Yufeng Jiang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary processing methods may include i) providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing r...