ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,758, issued on July 14, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"3-D DRAM structures and methods of manufacture" was invented by Chang Seok Kang (Santa Clara, Calif.), Tomohiko Kitajima (San Jose, Calif.), Nitin K. Ingle (San Jose, Calif.) and Sung-Kwan Kang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory devices incorporating bridged word lines are described. The memory devices include a plurality of active regions spaced along a first direction, a second direction and a third direction. A plurality of conductive layers is arranged so that at least one conductive layer is adjacent to at least one sid...