US Patent Issued to Applied Materials on Feb. 17 for "Gate all around backside power rail formation with backside dielectric isolation scheme" (Oregon, California Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,636, issued on Feb. 17, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Gate all around backside power rail formation with backside dielectric isolation scheme" was invented by Andrew Yeoh (Portland, Ore.), Benjamin Colombeau (San Jose, Calif.), Balasubramanian Pranatharthiharan (San Jose, Calif.), Ashish Pal (San Ramon, Calif.) and El Mehdi Bazizi (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods of manufacturing the same are described. The method includes forming distinct and separate bottom dielectric isolation layers underneath the source/drain and underneath the gate of a gate all ...