US Patent Issued to Applied Materials on Aug. 4 for "Carbon-containing cap layer for doped semiconductor epitaxial layer" (California Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,762, issued on Aug. 4, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Carbon-containing cap layer for doped semiconductor epitaxial layer" was invented by Jason Jewell (Santa Clara, Calif.) and Abhishek Dube (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a stack of alternating doped semiconductor epitaxial layers and cap epitaxial layers formed on a substrate. Each doped semiconductor epitaxial layer includes silicon having carrier dopants, and each cap epitaxial layer includes silicon and carbon un-doped with carrier dopants."

The patent was filed on Oct. 27, 2022, under Applicatio...