ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,059, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Titanium nitride gapfill processes for semiconductor structures" was invented by Yongjing Lin (San Jose, Calif.), Zhihui Liu (Sunnyvale, Calif.), Shih Chung Chen (Cupertino, Calif.), Haoyan Sha (San Jose, Calif.), Alexander Jansen (Danville, Calif.), Zhebo Chen (Santa Clara, Calif.), Janardhan Devrajan (Santa Clara, Calif.) and Tza-Jing Gung (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "One or more embodiments of the disclosure are directed to methods of forming structures that are useful for FEOL and BEOL processes. Embodiments of the present d...