ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,071, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Selectivity of boron hard masks using ion implant" was invented by Aykut Aydin (Sunnyvale, Calif.), Rajesh Prasad (Lexington, Mass.), Fenglin Wang (Lexington, Mass.), Rui Cheng (San Jose, Calif.), Karthik Janakiraman (San Jose, Calif.) and Kyu-Ha Shim (Andover, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Thicker hardmasks are typically needed for etching deeper capacitor holes in a DRAM structure. Instead of increasing the hardmask thickness, hardmasks may instead be formed with an increased etch selectivity relative to the underlying semiconductor struct...