ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,062, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Methods to improve oxide sidewall quality" was invented by Tianyang Li (San Jose, Calif.), Hang Yu (San Jose, Calif.), Rui Cheng (San Jose, Calif.), Deenesh Padhi (Saratoga, Calif.) and Woongsik Nam (Santa Clara, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary methods of forming a silicon-containing material may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber and include one or more features. ...