ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,122, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.).
"Method for metal gapfill" was invented by Yi Xu (San Jose, Calif.), Yu Lei (Belmont, Calif.), Aixi Zhang (Sunnyvale, Calif.), Bingqian Liu (Sunnyvale, Calif.), Zhimin Qi (Fremont, Calif.), Wei Lei (Campbell, Calif.) and Rongjun Wang (Dublin, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of metal gapfill including depositing a metal layer on a dielectric layer present on a field and/or in an opening of a feature via plasma enhanced atomic layer deposition utilizing a metal halide precursor and a plasma comprising hydrogen and a noble gas; and depos...