US Patent Issued to Applied Materials on Aug. 25 for "Ion source containing a sputter target" (Massachusetts Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,719,007, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Ion source containing a sputter target" was invented by Graham Wright (Newburyport, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ion source with a sputter target located at the end of the ion source is disclosed. The ion source may include an indirectly heated cathode and the sputter target may be disposed on the end opposite the cathode. The ion source may contain one or more side electrodes, wherein at least one of these electrodes is electrically biased relative to the arc chamber. In one embodiment, the second end of the ion source is made of a dopa...