US Patent Issued to Applied Materials on Aug. 25 for "Integration solution for NAND deep contact gap fill" (California Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,123, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Integration solution for NAND deep contact gap fill" was invented by Xi Cen (San Jose, Calif.), Kai Wu (Palo Alto, Calif.), Yao Xu (Santa Clara, Calif.), Yang Li (Sunnyvale, Calif.), Meng Zhu (Santa Clara, Calif.), Insu Ha (San Jose, Calif.), Jianqiu Guo (San Jose, Calif.), Chao Li (Santa Clara, Calif.), Rongjun Wang (Dublin, Calif.) and Xianmin Tang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of filling a via having a necking point includes performing a pre-clean process to remove residues from an exposed surface of a metal layer at ...