US Patent Issued to Applied Materials on Aug. 25 for "High-temperature implant for gate-all-around devices" (Massachusetts Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,804, issued on Aug. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"High-temperature implant for gate-all-around devices" was invented by Yan Zhang (Westford, Mass.), Taegon Kim (Gloucester, Mass.), Johannes M. Van Meer (Middleton, Mass.), Vikram M. Bhosle (North Reading, Mass.), Jae Young Lee (Bedford, Mass.) and Naushad K. Variam (Marblehead, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Approaches herein provide devices and methods for forming gate-all-around transistors with improved gate spacer k-values. One method may include forming a gate-all-around (GAA) stack including a plurality of alternating first layers and s...