US Patent Issued to Applied Materials on April 21 for "Method of forming carbon-based spacer for EUV photoresist patterns" (Singaporean, American Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,791, issued on April 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Method of forming carbon-based spacer for EUV photoresist patterns" was invented by Xinke Wang (Singapore), Zeqing Shen (San Jose, Calif.), Susmit Singha Roy (Campbell, Calif.), Abhijit Basu Mallick (Sunnyvale, Calif.), Bhaskar Jyoti Bhuyan (San Jose, Calif.), Jiecong Tang (Singapore), John Sudijono (Singapore) and Mark Saly (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of depositing a conformal carbon-containing spacer layer are described. Exemplary processing methods may include flowing a first precursor over a patterned surface a...