ALEXANDRIA, Va., April 21 -- United States Patent no. 12,606,579, issued on April 21, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Halogen-free molybdenum-containing precursors for deposition of molybdenum" was invented by Feng Q. Liu (San Jose, Calif.), Mark J. Saly (Santa Clara, Calif.) and David Thompson (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Exemplary methods of semiconductor processing, such as methods of depositing a molybdenum-containing material on a substrate, may include providing a molybdenum-containing precursor to a processing region of a semiconductor processing chamber in which the substrate is located. The molybdenum-containing precursor may include...