ALEXANDRIA, Va., May 19 -- United States Patent no. 12,631,442, issued on May 19, was assigned to Applied Materials Israel Ltd. (Rehovot, Israel).
"Depth profiling of semiconductor structures using multi-wavelength pump-probe technique" was invented by Ori Golani (Kibbutz Shoval, Israel), Ido Almog (Rehovot, Israel), Yariv Simovitch (Rehovot, Israel) and Guy Shwartz (Ramat-Gan, Israel).
According to the abstract* released by the U.S. Patent & Trademark Office: "A systems for in-depth profiling of patterned wafer samples including a pump pulse and plurality of probe pulses each having a different wavelength (Lambda1-Lambdan), and an optical setup configured to combine the plurality of probe pulses, such that they simultaneously reach the s...