ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,979, issued on April 7, was assigned to Apple Inc. (Cupertino, Calif.).

"Dual contact and power rail for high performance standard cells" was invented by Sambasivan Narayan (Campbell, Calif.) and Praveen Raghavan (Los Gatos, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A standard cell layout that may be implemented in FinFET devices or nanosheet FET devices is disclosed. The standard cell layout includes power supply connections from both a topside metal layer and a backside metal layer. A device in the standard cell may be connected to both the topside metal layer and the backside metal layer. Source/drain regions of the device may be conn...