US Patent Issued to AP Memory Technology on Sept. 1 for "Semiconductor structure and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,521, issued on Sept. 1, was assigned to AP Memory Technology Corp. (Hsinchu County, Taiwan).

"Semiconductor structure and manufacturing method thereof" was invented by Chung-Chiang Huang (HsinChu, Taiwan), Kee-Wei Chung (HsinChu, Taiwan) and Ru-Yi Cai (HsinChu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure including a semiconductor die, a component layer and a pseudo static random access memory (PSRAM) die is provided. The component layer is disposed on the surface of the semiconductor die, wherein the component layer includes an organic layer. The PSRAM die is disposed on the surface of the semiconductor die and is...