US Patent Issued to ANHUI HUASUN ENERGY on March 31 for "Semiconductor substrate, treating method thereof, solar cell and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,513, issued on March 31, was assigned to ANHUI HUASUN ENERGY Co. LTD. (Xuancheng, China).

"Semiconductor substrate, treating method thereof, solar cell and preparation method thereof" was invented by Xiwei Zhou (Xuancheng, China), Liang Zhang (Xuancheng, China), Jing Zhang (Xuancheng, China) and Ze Zhao (Xuancheng, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a semiconductor substrate and a treating method thereof, a solar cell and a preparation method thereof. The method for treating a semiconductor substrate includes forming a smooth surface area and a textured surface area adjacent to the smooth surface area on at least one...