US Patent Issued to Analog Devices on May 19 for "Gallium nitride superjunction transistor" (Massachusetts Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,158, issued on May 19, was assigned to Analog Devices Inc. (Wilmington, Mass.).

"Gallium nitride superjunction transistor" was invented by James G. Fiorenza (Carlisle, Mass.), Guanghai Ding (Bedford, Mass.) and Daniel Piedra (Somerville, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques to increase the number of current paths (or "channels") in a GaN transistor, without increasing the device area, thereby decreasing the on-resistance. In addition, this disclosure describes techniques to utilize back-side field management to improve the device's performance. For example, the techniques can include using p-type implantation into the subst...