US Patent Issued to Analog Devices on March 31 for "High frequency heterojunction bipolar transistor devices" (Massachusetts Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,461, issued on March 31, was assigned to Analog Devices Inc. (Wilmington, Mass.).

"High frequency heterojunction bipolar transistor devices" was invented by F. Jacob Steigerwald (North Andover, Mass.), James G. Fiorenza (Carlisle, Mass.), Guanghai Ding (Bedford, Mass.), Susan L. Feindt (Andover, Mass.), Pengfei Wu (Westford, Mass.) and Clifford Alan King (Gloucester, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques of integrating lateral HBT devices into a silicon on insulator (SOI) CMOS process. Similar approaches could also be applied to Fin Field-Effect Transistors (FinFETs). A first technique makes use of a CMOS replacement gate ...