US Patent Issued to ams-OSRAM on Oct. 6 for "Semiconductor substrate comprising a through-substrate-via and method for producing thereof" (Austrian, Dutch Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,757,705, issued on Oct. 6, was assigned to ams-OSRAM AG (Premstatten, Austria).

"Semiconductor substrate comprising a through-substrate-via and method for producing thereof" was invented by Georg Parteder (Sankt Ruprecht an der Raab, Austria), Peter Jerabek (Graz, Austria), Jorg Siegert (Graz, Austria) and Nebojsa Nenadovic (Wijchen, Netherlands).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate-with a rear surface and a main surface, an intermetal dielectric on the main surface of substrate, a metal layer embedded in the intermetal dielectric. The metal layer includes a top barrier layer. The top barrier layer is ...