US Patent Issued to ams-OSRAM International on Oct. 20 for "Growth substrate and method for manufacturing an optoelectronic semiconductor body" (German Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,751, issued on Oct. 20, was assigned to ams-OSRAM International GmbH (Regensburg, Germany).

"Growth substrate and method for manufacturing an optoelectronic semiconductor body" was invented by Jelena Ristic (Regensburg, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment a growth substrate includes a substrate and a buffer layer sequence having a plurality of semiconductor layers based on a nitride semiconductor compound material and a plurality of buffer layers, wherein the semiconductor layers and the buffer layers are arranged alternatingly, and wherein the buffer layers comprise at least one of the following two-dimensional l...