US Patent Issued to AMCAD ENGINEERING on June 23 for "Method for characterizing in pulse mode a III-V semiconductor transistor and associated test bench" (French Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,663,458, issued on June 23, was assigned to AMCAD ENGINEERING (Limoges, France).

"Method for characterizing in pulse mode a III-V semiconductor transistor and associated test bench" was invented by Christophe Charbonniaud (Chabrignac, France), Nicolas Labrousse (Aixe-sur-Vienne, France) and Maxime Faure (Limoges, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for characterizing in pulse-mode a III-V semiconductor transistor (2) utilizes an associated test bench (1). An RF pre-pulse is applied to the gate (2a) of the transistor (2) with a power level NRF defined according to a first predetermined law of variation so as to fix the charge s...