ALEXANDRIA, Va., April 15 -- United States Patent no. 12,601,795, issued on April 14, was assigned to Allegro MicroSystems LLC (Manchester, N.H.).
"Magnetic sensor element, sensing device and sensing operation using the sensing device for sensing an external magnetic field with low-noise" was invented by Andrey Timopheev (Vif, France), Ali Alaoui (Polienas, France) and Nikita Strelkov (Meylan, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic sensor element is disclosed, comprising a magnetic tunnel junction (MTJ) comprising a reference layer, a tunnel barrier layer, a sense layer having a sense magnetization freely orientable in the presence of the external magnetic field. The reference layer...