ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,793, issued on Feb. 24, was assigned to ALKAIDSEMI (SHANGHAI) TECHNOLOGIES Corp. (Shanghai).
"Super junction trench MOSFET and method for preparing same" was invented by Kaiyu Chen (Shanghai).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for preparing a super junction trench MOSFET, comprising: providing a substrate, and forming a first trench in the substrate; depositing an epitaxial portion of a first stage in the first trench while supplying a doped gas and an etching gas, and performing an epitaxial process after stopping supplying the doped gas and the etching gas, wherein impurities in the epitaxial portion of the first stage are diff...