US Patent Issued to Akoustis Technologies on April 7 for "Doped crystalline piezoelectric resonator films and methods of forming doped single crystalline piezoelectric resonator layers on substrates via epitaxy" (New York, North Carolina Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,906, issued on April 7, was assigned to Akoustis Technologies Corp. (Huntersville, N.C.).

"Doped crystalline piezoelectric resonator films and methods of forming doped single crystalline piezoelectric resonator layers on substrates via epitaxy" was invented by Craig Moe (Penfield, N.Y.), Jeffrey M. Leathersich (Rochester, N.Y.), Dae Ho Kim (Cornelius, N.C.), Zhiqiang Bi (Mooresville, N.C.) and Mary Winters (Webster, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A piezoelectric resonator can include a substrate and a piezoelectric aluminum nitride layer on the substrate, where the piezoelectric aluminum nitride layer is doped with a dopant sele...