ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,003, issued on May 5, was assigned to Adeia Semiconductor Solutions LLC (San Jose, Calif.).
"High density three-dimensional integrated capacitors" was invented by Vage Oganesian (Sunnyvale, Calif.), Belgacem Haba (Saratoga, Calif.), Ilyas Mohammed (Santa Clara, Calif.) and Piyush Savalia (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A component includes a substrate and electrically conductive layers formed in contact with the substrate. The substrate can consist essentially of a material having a coefficient of thermal expansion of less than 10 ppm/deg C. The substrate can have a surface and an opening extending downwardly therefrom...