ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,026, issued on Feb. 24, was assigned to ACM Research (Shanghai) Inc. (Shanghai).
"Method of removing barrier layer" was invented by Hui Wang (Shanghai), Hongwei Zhang (Shanghai), Yingwei Dai (Shanghai), Yinuo Jin (Shanghai) and Jian Wang (Shanghai).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present invention provide a method for removing a barrier layer of a metal interconnection on a wafer, which remove a single-layer metal ruthenium barrier layer. A method comprises: oxidizing step, is to oxidize the single-layer metal ruthenium barrier layer into a ruthenium oxide layer by electrochemical anodic oxidation process; oxide laye...