US Patent Issued to 1FINITY on May 5 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,622,010, issued on May 5, was assigned to 1FINITY Inc. (Kawasaki, Japan).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Yusuke Kumazaki (Atsugi, Japan), Naoki Hara (Sagamihara, Japan), Naoya Okamoto (Isehara, Japan), Shirou Ozaki (Yamato, Japan) and Toshihiro Ohki (Hadano, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a substrate; an electron traveling layer provided above the substrate; an electron supply layer provided above the electron traveling layer; gate, source and drain electrodes provided above the electron supply layer; first protrusions that extend from a lower ...