ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,215, issued on March 24.
"Non-volatile memory device having schottky diode" was invented by Peiching Ling (San Jose, Calif.) and Nanray Wu (Hayward, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device includes: an insulation layer; a Schottky diode, which is formed on the insulation layer; a writing wire which is conductive and is electrically connected to a first end of the Schottky diode; a memory unit on the Schottky diode, the memory unit being electrically connected to a second end of the Schottky diode; and a selection wire on the memory unit, the selection wire being electrically connected to the memory unit; w...