ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,540, issued on June 30.

"Integrated circuit device" was invented by Mankit Lam (Colorado Springs, Colo.) and Julius Kovats (Manitou Springs, Colo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device includes a die including a silicon region having a coefficient of thermal expansion (CTEsilicon), and a conductive contact on a first side of the first die. An encapsulant laterally adjacent the silicon region of the first die has a coefficient of thermal expansion (CTEencapsulant), wherein a mismatch between the CTEsilicon and the CTEencapsulant defines a thermal stress interface between the silicon region and the encapsulan...