US Patent Issued on July 21 for "Semiconductor optoelectronic integrated circuit and methodology for making same employing gate-all-around epitaxial structures" (New Hampshire Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,212, issued on July 21.

"Semiconductor optoelectronic integrated circuit and methodology for making same employing gate-all-around epitaxial structures" was invented by Geoff W. Taylor (Wilton, N.H.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuitry is fabricated from semiconductor layers formed on a substrate, which include a p-type gate-all-around layer structure that includes a plurality of quantum well structures formed between a pair of p-type thin doped layers spaced vertically from one another. A p-type layer is formed above the p-type gate-all-around layer structure. An etch operation exposes the p-type layer. P-type ions ar...