ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,579, issued on Jan. 13.
"Semiconductor device and method for producing same" was invented by Kohei Taniguchi (Tokyo), Yoshinobu Ozaki (Tokyo), Kei Itagaki (Tokyo), Kazuhiro Yamamoto (Tokyo), Kanami Nakamura (Tokyo) and Hiroki Hashimoto (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a substrate; an adhesive member arranged on a surface of the substrate; a first chip stacked on the adhesive member with a first adhesive piece interposed therebetween; and a second chip stacked on the first chip with a second adhesive piece interposed therebetween. The adhesive member has a multilayer structure including a pair of ...