ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,294, issued on Feb. 17.
"Magnetoresistive random access memory" was invented by Chun-Ming Lin (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a magnetoresistive random access memory (MRAM), including a magnetic tunnel junction (MTJ) and a transistor structure. The magnetic tunnel junction includes a magnetic fixed layer, a tunnel barrier layer, a magnetic free layer and at least one magnetic enhancement layer. The tunnel barrier layer is stacked with the magnetic fixed layer. The magnetic free layer is stacked with the tunnel barrier layer. The at least one magnetic enhancement layer is disposed...