ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,340, issued on Aug. 4.
"Semiconductor digital photomultiplier photon counter and imager and related technology" was invented by Konstantin Nikolaev (Zug, Switzerland), Andrey Saveliev (Hamburg, Germany), Valeriy Savelyev (Hamburg, Germany) and Andrey Kunatbaev (Houston).
According to the abstract* released by the U.S. Patent & Trademark Office: "A breakdown-avalanche photon sensors array is shown, which is implemented in CMOS technology, wherein the breakdown-avalanche photon sensors array has single photon sensitivity, comprising: a semiconductor substrate; and an epitaxial layer, which is located above the semiconductor substrate; and a breakdown-avalanche photon sensor, which i...