US Patent Issued on April 7 for "Non-volatile memory and corresponding manufacturing method" (French Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,471, issued on April 7.

"Non-volatile memory and corresponding manufacturing method" was invented by Radouane Habhab (Marseilles, France), Vincenzo Della Marca (Marseilles, France), Nadia Miridi ep Seroschtanoff (Auriol, France), Pascal Masson (Valbonne, France), Franck Melul (Aubagne, France) and Madjid Akbal (Trets, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "The non-volatile memory device includes memory cells including a control gate vertically buried in a semiconductor substrate doped with a first type of dopant and a dielectric interface able to trap electrical charges covering sides of the control gate facing the semiconductor subst...