ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,150, issued on April 21.

"Memory cell arrangements and method of operating a memory cell" was invented by Mohammad Sajedi Alvar (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory cell arrangements and methods of operating a memory cell are disclosed, wherein a memory cell arrangement includes a memory cell including: a field-effect transistor including a gate terminal, a first source/drain terminal, and a second source/drain terminal; and a spontaneously-polarizable capacitor connected to the first source/drain terminal of the field-effect transistor, the spontaneously-polarizable capacitor having a first capacitance; and a wri...