US Patent Issued on April 21 for "FCNVM-ALEFD (fully covered non-volatile memory (NVM) over advanced low electrostatic field transistor (ALEFD)" (Washington, California Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,589, issued on April 21.

"FCNVM-ALEFD (fully covered non-volatile memory (NVM) over advanced low electrostatic field transistor (ALEFD)" was invented by Mammen Thomas (Seattle) and Arun Mammen Thomas (Dublin, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Device scaling has increased the device density of integrated circuits (ICs) and reduced the cost of circuits. Today development of new device structures, use of new materials and complex process steps are implemented to continue scaling of the semiconductor devices. The added manufacturing steps and complexity have increased cost of ICs directly impacting the implementation of IoT devices ...