INTERNATIONAL PATENT: ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD., 株洲中车时代半导体有限公司 FILES APPLICATION FOR "SIC MOSFET STRUCTURE AND MANUFACTURING METHOD THEREFOR"

GENEVA, March 23 -- ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD. (Semiconductor Line 3, Tianxin High-tech Zone, Shifeng DistrictZhuzhou, Hunan 412001), 株洲中车时代半导体有限公司 (中国湖南省株洲市石峰区田心高科园半导体三线) filed a patent application (PCT/CN2025/120346) for "SIC MOSFET STRUCTURE AND MANUFACTURING METHOD THEREFOR" on Sep 10, 2025. With publication no. WO/2026/056907, the details related to the patent application was published on Mar 19, 2026.

Notably, the patent application was submitted under the International Patent Classif...