INTERNATIONAL PATENT: YANGTZE MEMORY TECHNOLOGIES HOLDING CO., LTD. FILES APPLICATION FOR "SEMICONDUCTOR STRUCTURES AND FABRICATING METHOD THEREOF"

GENEVA, March 8 -- YANGTZE MEMORY TECHNOLOGIES HOLDING CO., LTD. (Room 1701, Building A, Overseas Talent Building, No. 999 Gaoxin Avenue, East Lake High-tech Development ZoneWuhan, Hubei 430000) filed a patent application (PCT/CN2024/115847) for "SEMICONDUCTOR STRUCTURES AND FABRICATING METHOD THEREOF" on Aug 30, 2024. With publication no. WO/2026/044677, the details related to the patent application was published on Mar 05, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): XIAO, Liang (Room 1701, Building A, Overseas Talent Building, No. 999 Gaoxin Avenue, East Lake High-tech Development Zone...