INTERNATIONAL PATENT: XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD., 西安奕斯伟材料科技股份有限公司 FILES APPLICATION FOR "EPITAXIAL GROWTH METHOD AND EPITAXIAL WAFER"

GENEVA, April 26 -- XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD. (Room 1-3-029, No.1888 South Xifeng Rd., Hi-Tech ZoneXi'an, Shaanxi 710100), 西安奕斯伟材料科技股份有限公司 (中国陕西省西安市高新区西沣南路1888号1-3-029室) filed a patent application (PCT/CN2024/139548) for "EPITAXIAL GROWTH METHOD AND EPITAXIAL WAFER" on Dec 16, 2024. With publication no. WO/2026/081336, the details related to the patent application was published on Apr 23, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which...