INTERNATIONAL PATENT: TOYODA GOSEI CO., LTD., 豊田合成株式会社, THE UNIVERSITY OF OSAKA, 国立大学法人大阪大学 FILES APPLICATION FOR "METHOD FOR PRODUCING GROUP III-NITRIDE SEMICONDUCTOR"

Posted On: 2026-04-06

GENEVA, April 6 -- TOYODA GOSEI CO., LTD. (1 Haruhinagahata, Kiyosu-shi, Aichi4528564), 豊田合成株式会社 (愛知県清須市春日長畑１番地), THE UNIVERSITY OF OSAKA (1-1, Yamadaoka, Suita-shi, Osaka5650871), 国立大学法人大阪大学 (大阪府吹田市山田丘１番１号) filed a patent application (PCT/JP2025/028050) for "METHOD FOR PRODUCING GROUP III-NITRIDE SEMICONDUCTOR" on Aug 07, 2025. With publication no. WO/2026/070056, the details related to the patent application was published on Apr 02, 202...

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इस लेख के रीप्रिंट को खरीदने या इस प्रकाशन का पूरा फ़ीड प्राप्त करने के लिए, कृपया हमे संपर्क करें.

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INTERNATIONAL PATENT: TOYODA GOSEI CO., LTD., 豊田合成株式会社, THE UNIVERSITY OF OSAKA, 国立大学法人大阪大学 FILES APPLICATION FOR "METHOD FOR PRODUCING GROUP III-NITRIDE SEMICONDUCTOR"