INTERNATIONAL PATENT: TOKYO ELECTRON LIMITED, TOKYO ELECTRON U.S. HOLDINGS, INC. FILES APPLICATION FOR "METHODS FOR FORMING LOW-RESISTIVITY INTERCONNECT STRUCTURES COMPRISING RUTHENIUM"

GENEVA, April 14 -- TOKYO ELECTRON LIMITED (3-1 Akasaka 5-chome, Minato-kuTokyo, 107-6325), TOKYO ELECTRON U.S. HOLDINGS, INC. (401 S 1st St, Suite 900Austin, Texas 78704) filed a patent application (PCT/US2025/034600) for "METHODS FOR FORMING LOW-RESISTIVITY INTERCONNECT STRUCTURES COMPRISING RUTHENIUM" on Jun 20, 2025. With publication no. WO/2026/075702, the details related to the patent application was published on Apr 09, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): LEE, Tek Po Rinus (NanoFab 300 South 255 Fuller Rd., Suite 214Albany, New York 12203), IMAKITA, Kenichi (NanoFab 300 So...