INTERNATIONAL PATENT: TOKYO ELECTRON LIMITED, TOKYO ELECTRON U.S. HOLDINGS, INC. FILES APPLICATION FOR "METHOD FOR PLASMA ETCHING VERTICAL FEATURES IN A SILICON-BASED SEMICONDUCTOR LAYER OF A SUBSTRATE"

GENEVA, April 20 -- TOKYO ELECTRON LIMITED (3-1 Akasaka 5-chome, Minato-kuTokyo, 107-6325), TOKYO ELECTRON U.S. HOLDINGS, INC. (401 S 1st St, Suite 900Austin, Texas 78704) filed a patent application (PCT/US2025/034154) for "METHOD FOR PLASMA ETCHING VERTICAL FEATURES IN A SILICON-BASED SEMICONDUCTOR LAYER OF A SUBSTRATE" on Jun 18, 2025. With publication no. WO/2026/080112, the details related to the patent application was published on Apr 16, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): ZHANG, Du (NanoFab 300 South 255 Fuller Rd., Suite 214Albany, New York 12203), TSAI, Yu-Hao (NanoFab 3...