INTERNATIONAL PATENT: TOKYO ELECTRON LIMITED, TOKYO ELECTRON U.S. HOLDINGS, INC. FILES APPLICATION FOR "LOW-TEMPERATURE ETCHING OF CARBON-CONTAINING LAYERS"

GENEVA, April 8 -- TOKYO ELECTRON LIMITED (3-1 Akasaka 5-chome, Minato-kuTokyo, 107-6325), TOKYO ELECTRON U.S. HOLDINGS, INC. (401 S 1st St, Suite 900Austin, Texas 78704) filed a patent application (PCT/US2025/033448) for "LOW-TEMPERATURE ETCHING OF CARBON-CONTAINING LAYERS" on Jun 13, 2025. With publication no. WO/2026/072117, the details related to the patent application was published on Apr 02, 2026.

Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).

Inventor(s): CHANG, Shihsheng (NanoFab 300 South 255 Fuller Rd., Suite 214Albany, New York 12203), ZHANG, Du (NanoFab 300 South 255 Fuller Rd., Suite 214Albany, N...