GENEVA, Aug. 21 -- NEXSTROM PTE. LTD. filed a patent application (SG2026/050071) for “STRAINED 2D FET WITH NANO-TOPOLOGY ENGINEERING”. With publication no. WO/2026/173533, here are the other details related to the patent application:
Kind: Initial Publication with ISR [A1]
IPC: H10D 62/53
Notably, the patent application was submitted under the International Patent Classification (IPC) system, which is managed by the World Intellectual Property Organization (WIPO).
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